发明名称 |
Novel Manufacturing Approach for Collector and N Type Buried Layer Of Bipolar Transistor |
摘要 |
This invention disclosed a novel manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that an oxide-nitride-oxide (ONO) sandwich structure is employed instead of oxide-nitride dual layer structure before trench etching. Another aspect is, through the formation of silicon oxide spacer in trench sidewall and silicon oxide remaining in trench bottom in the deposition and etch back process, the new structure hard mask can effectively protect active region from impurity implanted in ion implantation process.
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申请公布号 |
US2011159659(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20100979907 |
申请日期 |
2010.12.28 |
申请人 |
CHIU TZUYIN;CHU TUNGYUAN;FAN YUNGCHIEH;QIAN WENSHENG;CHEN FAN;XU JIONG;ZHANG HAIFANG |
发明人 |
CHIU TZUYIN;CHU TUNGYUAN;FAN YUNGCHIEH;QIAN WENSHENG;CHEN FAN;XU JIONG;ZHANG HAIFANG |
分类号 |
H01L21/331;B82Y40/00 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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