发明名称 |
METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION |
摘要 |
Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.
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申请公布号 |
US2011159669(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US200913058047 |
申请日期 |
2009.09.18 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT |
发明人 |
YANG WOO SEOK;CHO SEONG MOK;RYU HO JUN;CHEON SANG HOON;YU BYOUNG GON;CHOI CHANG AUCK |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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