发明名称 PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK
摘要 A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.
申请公布号 US2011156046(A1) 申请公布日期 2011.06.30
申请号 US20100978446 申请日期 2010.12.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM YEON-JU;MOON SUNG-JAE;CHO YUN-JUNG;BAEK BUM-KI;LEE KWANG-HOON;NA BYOUNG-SUN;YANG SUNG-HOON;KIM YOON-JANG;CHO EUN
分类号 H01L29/04;G03F1/00 主分类号 H01L29/04
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