GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND EPITAXIAL SUBSTRATE

摘要

Provided is a group III nitride semiconductor laser element having a laser resonator which makes a low threshold current possible and having the structure which makes an increase in oscillation yield possible on a semipolar surface of a support base in which a c axis of a hexagonal group III nitride is tilted in the direction of an m axis. First and second torn surfaces (27, 29) which serve as the laser resonators intersect an m-n surface. In the group III nitride semiconductor laser element (11), it is possible to use light emission of a band transition which makes the low threshold current possible, because a laser waveguide is extended in a direction of the crossing line of the m-n surface and the semipolar surface (17a). The first and second torn surfaces (27, 29) are extended from an edge (13c) of a first surface (13a) to an edge (13d) of a second surface (13b). The torn surfaces (27, 29) are not formed by dry etching and are different from cleavage planes such as a c plane, an m plane, or an a plane. A shift angle AV which is formed by a waveguide vector LGV and a projection component VCP can fall within the range from -0.5 degree to +0.5 degree.