| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a metal carrier, and manufacturing method. <P>SOLUTION: The semiconductor device includes a metal carrier substrate 105. Above the carrier substrate, a first semiconductor layer 115 of Al<SB>x1</SB>Ga<SB>y1</SB>In<SB>z1</SB>N (x1+y1+z1=1, x1≥0, y1≥0, z1≥0) is formed. A second semiconductor layer 120 of Al<SB>x2</SB>Ga<SB>y2</SB>In<SB>z2</SB>N (x2+y2+z2=1, x2>x1, y2≥0, z2≥0) is arranged on the first semiconductor layer and a gate region is arranged on the second semiconductor layer. The semiconductor device furthermore includes a source region and a drain region, wherein one of these regions is electrically coupled to the metal carrier substrate and includes a conductive region extending through the first semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
