发明名称 Memory devices and methods of operating the same
摘要 A memory device includes a memory cell. The memory cell includes: a bipolar memory element and a bidirectional switching element. The bidirectional switching element is connected to ends of the bipolar memory element, and has a bidirectional switching characteristic. The bidirectional switching element includes: a first switching element and a second switching element. The first switching element is connected to a first end of the bipolar memory element and has a first switching direction. The second switching element is connected to a second end of the bipolar memory element and has a second switching direction. The second switching direction is opposite to the first switching direction.
申请公布号 US2011161605(A1) 申请公布日期 2011.06.30
申请号 US20100926443 申请日期 2010.11.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE MYOUNG-JAE;LEE DONG-SOO;LEE CHANG-BUM;LEE SEUNG-RYUL
分类号 G06F13/00;H01L45/00 主分类号 G06F13/00
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