VERTICAL GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR

摘要

Disclosed is a vertical Group III nitride semiconductor light-emitting element that is capable of solving issues with lateral structures and flip-chip structures, and that is further capable of increasing the amount of light emitted from the surface by effectively reflecting light traveling toward the rear surface from among the ultraviolet light emitted by a light-emitting layer. Also disclosed is a production method therefor. The vertical Group III nitride semiconductor light-emitting element (100) is provided, in order, with a p-side electrode layer (111); a conductive support section (109); a connecting layer (108); a reflective electrode layer (107); a Group III nitride semiconductor laminate comprising a p-type semiconductor laminate (105), a light-emitting layer (104), and an n-type semiconductor laminate (103); and an n-side electrode layer (110). The vertical Group III nitride semiconductor light-emitting element is characterized in that the aforementioned reflective electrode layer (107) comprises either rhodium, a rhodium-containing alloy, ruthenium, or a ruthenium-containing alloy directly bonded to the aforementioned p-type semiconductor laminate (105), and in that the emission wavelength is in the range of 200 to 495 nm.