Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same

摘要

Cadmium Telluride Thin Film Photovoltaic Devices and Methods of Manufacturing the Same 5OF THE DISCLOSURE Methods for manufacturing a cadmium telluride based thin film photovoltaic device 10 are generally disclosed. The method can include sputtering a resistive transparent layer 16 on a transparent conductive oxide layer 14 from an alloy target 64 including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium 10 sulfide layer 18 on the resistive transparent layer 16, forming a cadmium telluride layer 20 on the cadmium sulfide layer 18, and forming a back contact layer 22 on the cadmium telluride layer 18. Cadmium telluride thin film photovoltaic devices 10 are also generally disclosed including a resistive transparent layer 16 having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction. C /word/SPEC-9t305 Id. Fig. 1