VACUUM PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus that suppresses a decrease in film quality at the periphery of a substrate due to distribution of film formation conditions by increasing the flow rate of exhaust gas discharged from a slit between discharge electrodes by reducing an exhaust gas flow of gas having not contributed to film formation and flowing to the periphery of the substrate.

SOLUTION: The vacuum processing apparatus 1A that jets film forming gas from the discharge electrodes 6 and performs decomposition of the film forming gas and radical generation in a plasma atmosphere of the discharge electrodes 6 to subject the substrate to vacuum plasma processing includes a gas block barrier structure portion that increases pressure drop of a gas flow passage by: fitting a gas block barrier material 30 for narrowing down the inter-plane distance between a substrate table and the discharge electrodes 6 to the peripheral edge of the substrate table at a predetermined distance from the substrate; and narrowing down the inter-passage-plane width of a flow of gas flowing from the plasma atmosphere to the back of a sticking-preventive plate 7 or a vacuum discharge portion via the end of the substrate.

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