| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preventing clogging in an outlet of a source gas by suppressing growth of an unnecessary SiC polycrystal formed in a place other than a crystal growth surface in a reaction vessel without using an etching gas. SOLUTION: A first inlet passage 9d extending along the center axis of a reaction vessel 9 is disposed on the outer periphery of a hollow part 9c of the reaction vessel 9, and a first outlet passage 9i that connects the first inlet passage 9d and the hollow part 9c of the reaction vessel 9 is disposed on a side part 9e of the reaction vessel 9. By allowing an inert gas 15 to flow from the first outlet passage 9i via the first inlet passage 9d into the hollow part 9c of the reaction vessel 9, a source gas 3 is diluted, which passes through between the inner wall 9m of the reaction vessel 9 and a base 10. COPYRIGHT: (C)2011,JPO&INPIT |
