| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element including a structure capable of suppressing or preventing dielectric breakdown of a gate insulating film. SOLUTION: This field-effect transistor 1 (nitride semiconductor element) includes a laminate structure part 3 of nitride semiconductors, a gate insulating film 15, a gate electrode 16, a source electrode 18, a drain electrode 19 and a guard ring layer 11. The laminate structure part 3 is formed by laminating n-type GaN layers 4, 5, a p-type GaN layer 6 and an n-type GaN layer 7. The gate insulating film 15 is formed on a wall surface 9 of the laminate structure part 3 to straddle the n-type GaN layer 5, the p-type GaN layer 6 and the n-type GaN layer 7. The gate electrode 16 faces the p-type GaN layer 6 interposing the gate insulating film 15. The guard ring layer 11 comprises a p-type GaN layer formed on the n-type GaN layer 5 to face the wall surface 9 in the p-type GaN layer 6 with a space. COPYRIGHT: (C)2011,JPO&INPIT
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