发明名称 Methods For Generating Representations of Flatness Defects on Wafers
摘要 Methods are disclosed for generating a representation of flatness defects on a wafer. Data is received describing the thickness of the wafer at a plurality of points on a wafer divided into a plurality of sites. A reference plane is defined for each of the plurality of sites. For each of the sites, an upper plane and a lower plane are defined relative to the reference plane. A determination is made as to which of the plurality of points on the wafer represents a flatness defect by identifying which points are not disposed between the upper plane and lower plane. A representation is then generated depicting a location of each of the flatness defects on the wafer. In some embodiments, a single representation is generated depicting the location of flatness defects on a plurality of wafers.
申请公布号 US2011160890(A1) 申请公布日期 2011.06.30
申请号 US20090648613 申请日期 2009.12.29
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 PITNEY JOHN A.
分类号 G06F19/00;G01B21/30;G06F17/00 主分类号 G06F19/00
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