| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a metal material at simple and easy mounting process without a risk of causing short circuit in between metal materials, when co-integration is processed for nickel silicide and nickel germanide from a substrate including a semiconductor region containing silicon and that containing germanium. <P>SOLUTION: The method of constituting the metal material includes a step of preparing the substrate including a region formed from a first semiconductor material, and a second material containing germanium separated by a pattern formed from a dielectric material, a step of performing deposition (F2) of a metal layer, and a step of performing a first thermal process (F3). The metal layer is reacted with the first semiconductor material, and the second semiconductor material containing germanium to respectively constitute a first metal material, and a second metal material containing germanium. The first thermal process (F3) is performed in an atmosphere containing 0.01 to 5% oxygen. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
