| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality semiconductor device. SOLUTION: The semiconductor device includes a silicon substrate 106 containing a protruding portion 108 between element isolation regions, an insulating portion 112 on the protruding portion 108, a silicon fin 114 on the insulating portion 112, an element isolation layer 116 which resides in the element isolation region and has a top surface positioned lower than the top surface of the protruding portion 108, a source/drain region formed at the silicon fin 114, a lateral-direction epitaxial growth silicon portion 118 protruding outward from the side surface of the silicon fin 114 of the source/drain region 104, a gate electrode 124 provided on the silicon fin 114 via a gate insulating layer 122 in a gate electrode region 102, a first spacer 128 adjacent to the side surface of the gate electrode 124, and a second spacer 130 covering the side surface of the protruding portion 108 in the source/drain region 104. COPYRIGHT: (C)2011,JPO&INPIT
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