| 摘要 |
PROBLEM TO BE SOLVED: To set a latchup voltage of a semiconductor device for ESD protection, using a latchup, to an arbitrary value. SOLUTION: The semiconductor device 300 includes: a P-type substrate 301; an N type well region 302 formed on a surface of the P-type substrate 301; a P+ type diffusion region 303 and an N+ type diffusion region 304 on a surface of the N type well region 302; an oxide film 305 disposed on a boundary between the P type substrate 301 and N type well region 302; polysilicon 306 disposed on a part of the oxide film 305; and a P+ type diffusion region 307 and an N+ type diffusion region 308 on a surface of the P type substrate 301. A floating electrode 309 is disposed to be capacitively coupled to the polysilicon 306 and N type well region 302 respectively. The polysilicon 306 is grounded. COPYRIGHT: (C)2011,JPO&INPIT
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