| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which suppresses a reduction in the heating efficiency of a silicon wafer, even when using the temperature of a radiant heating source as an intermediate temperature range from a low temperature range. SOLUTION: A heat treatment apparatus is provided with: a radiant heating source 31; a first reflecting plate 8a provided in the upper part of the radiant heating source 31; and a second reflecting plate 8b provided in the lower part of the radiant heating source 31. An object to be heated W containing silicon is arranged between the first reflecting plate 8a and the second reflecting plate 8b. The heat treatment apparatus is configured in such a manner that the object to be heated W containing silicon is heat-treated in a space S in which the radiant energy from the radiant heating source 31 repeats reflection between the first reflecting plate 8a and the second reflecting plate 8b. COPYRIGHT: (C)2011,JPO&INPIT
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