发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
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申请公布号 |
US2011159771(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US201113045560 |
申请日期 |
2011.03.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU;MARUYAMA JUNYA;OHNO YUMIKO |
分类号 |
H01J9/24;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01J9/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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