发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
申请公布号 US2011159771(A1) 申请公布日期 2011.06.30
申请号 US201113045560 申请日期 2011.03.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU;MARUYAMA JUNYA;OHNO YUMIKO
分类号 H01J9/24;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 H01J9/24
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