Electronic component e.g. silicon controlled rectifier, manufacturing method, involves doping portion of body regions by introducing dopant atoms into portion through intermediate region formed between separate gate regions

摘要

The method involves forming doped connection regions (502, 503) on and/or over a substrate. Body regions (504, 505) are formed between the doped connection regions. Two separate gate regions are formed on and/or over the body regions, and a portion of the body regions is doped by introducing dopant atoms. The introduction of the dopant atoms into the portion of the body regions is carried out through an intermediate region formed between the separate gate regions. Independent claims are also included for the following: (1) a drain extended MOS field-effect transistor comprising two doped connection regions (2) an electronic component arrangement comprising drain extended MOS field-effect transistors.