| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of a new structure. <P>SOLUTION: The multi-value type semiconductor device has: memory cells connected in series; a drive circuit for driving a second signal line and a word line by selecting a memory cell; a drive circuit for selecting either write electric potential for outputting to the first signal line; a read circuit for comparing electric potential of the bit line with reference electric potential; and an electric potential generation circuit for generating the write electric potential and reference electric potential for supplying to the drive circuit and the read circuit. One of the memory cells has: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal lines; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer, and the gate electrode of the first transistor is connected to one of the source and drain electrodes of the second transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
