| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve productivity by reducing the effects of stress caused by a transparent electrode layer on a silicon substrate in a crystal silicon solar cell. <P>SOLUTION: A method of manufacturing a crystal silicon solar cell is configured as follows. A one-conductivity-type mono-crystal silicon substrate is used. The crystal silicon solar cell includes a p-type silicon-based thin-film layer on one face of the substrate, a substantially intrinsic silicon-based thin-film layer between the substrate and the p-type silicon-based thin-film, an n-type silicon-based thin-film layer on the other face of the substrate, a substantially intrinsic silicon-based thin-film layer between the substrate and the n-type silicon-based thin-film layer, and each transparent electrode layer of≥1,200 nm on both sides of the substrate. Each transparent electrode layer is simultaneously deposited. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
