发明名称 ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an electrode plate for a plasma processing apparatus that improves in-plane uniformity of plasma processing and facilitates replacement of an upper electrode having been consumed. SOLUTION: The electrode plate 3 for the plasma processing apparatus is constituted by stacking a plurality of electrode constitution plates and providing a plurality of gas passing holes 11 penetrating the electrode constitution plates along a thickness is provided with a gap portion s1 formed of a plurality of grooved recesses 32A to 32E, avoiding the gas passing holes 11, at an outer circumferential portion between adjacent electrode constitution plate 3a and 3b, wherein the gap portion s1 is provided so as to be open on outer circumferential surfaces of the electrode constitution plates 3a, and both the electrode constitution plates 3a and 3b are smaller in contact area per unit area at the outer circumferential portion of the electrode plate 3 than at a center portion thereof. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011129557(A) 申请公布日期 2011.06.30
申请号 JP20090283826 申请日期 2009.12.15
申请人 MITSUBISHI MATERIALS CORP 发明人 FUJITA SATOSHI;TAKAHATA KOTA;YONEHISA TAKASHI
分类号 H01L21/3065 主分类号 H01L21/3065
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