发明名称 |
ORGANIC THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor, and a method of manufacturing the same. SOLUTION: The organic thin-film transistor includes: an insulation substrate formed with multiple barrier ribs and multiple grooves partitioned by the barrier ribs; a source and drain electrodes respectively formed in the grooves isolated from each other out of the multiple grooves; a gate electrode formed in the groove between the source and drain electrodes; an opening formed by etching the barrier ribs between the source electrode and the gate electrode and between the gate electrode and the drain electrode; a gate insulating film formed in the opening; and an organic semiconductor layer formed on the gate insulating film. The organic thin-film transistor allows mass production, and has an excellent electrical characteristic. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011129931(A) |
申请公布日期 |
2011.06.30 |
申请号 |
JP20100283451 |
申请日期 |
2010.12.20 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO LTD;SUNGKYUNKWAN UNIV FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
HA SANG WON;CHUNG IL SUB;HEO JIN HEE;KIM KYO HYEOK;KWON JUNG MIN;EUM KYU HAG;YIM SANG IL;RYU CHANG SUP |
分类号 |
H01L29/786;H01L21/336;H01L51/05;H01L51/40 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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