| 摘要 |
An insulating cover film is formed over at least a portion of a gate electrode in the direction of the channel width. A diffusion layer is formed to a portion of a substrate situating at a device forming region, thereby forming a source and a drain of a transistor. An insulating layer is formed over the device forming region, over the gate electrode, and over the insulating cover film. A contact is formed to the insulating layer and connected to the diffusion layer. A silicide layer is formed over the gate electrode. A side wall is formed higher than the gate electrode in a region in which the insulating cover film is formed. Then, the contact faces a region of the gate electrode in which the insulating cover film is formed.
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