发明名称 |
FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM |
摘要 |
A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
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申请公布号 |
US2011159188(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20100972599 |
申请日期 |
2010.12.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATO HITOSHI;ORITO KOHICHI;KIKUCHI HIROYUKI;OTANI MUNEYUKI;KUMAGAI TAKESHI;NARUSHIMA KENSAKU;NISHIMORI TAKASHI |
分类号 |
C23C16/34;C23C16/00;C23C16/52 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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