发明名称 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM
摘要 A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
申请公布号 US2011159188(A1) 申请公布日期 2011.06.30
申请号 US20100972599 申请日期 2010.12.20
申请人 TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;ORITO KOHICHI;KIKUCHI HIROYUKI;OTANI MUNEYUKI;KUMAGAI TAKESHI;NARUSHIMA KENSAKU;NISHIMORI TAKASHI
分类号 C23C16/34;C23C16/00;C23C16/52 主分类号 C23C16/34
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