NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a nitride semiconductor element which is provided with: a nitride semiconductor multilayer structure (20) having a p-type semiconductor region having the surface (12) tilted at an angle of 1-5° from the m-plane; and an electrode (30) which is provided on the p-type semiconductor region. The p-type semiconductor region is formed of an AlxInyGazN (x+y+z=1, x=0, y=0, z=0) semiconductor layer (26). The electrode (30) includes an Mg layer (32) in contact with the surface (12) of the p-type semiconductor region, and a metal layer (34) formed on the Mg layer (32). The metal layer (34) is formed of at least one kind of metal selected from among a group composed of Pt, Mo and Pd.