| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which reliability can be improved without increasing the wiring resistance of copper wiring or a contact and resistance in the semiconductor device having the copper wiring. SOLUTION: In an opening formed at an insulating film, there are formed a first film containing a first metal material having a diffusion preventive action with respect to copper, a second film including a copper film containing oxygen, a third film containing copper and a second metal material having a diffusion preventive action with respect to copper by being coupled with oxygen, and a fourth film using copper as a main material. Then, a barrier layer containing the first metal material, the second metal material, and oxygen is formed between the insulating film and the fourth film by heat treatment. COPYRIGHT: (C)2011,JPO&INPIT |
