| 摘要 |
<p><PICT:0922280/III/1> Ultra-pure silicon, or other semiconductor substances are produced by a modification of the process of chemical conversion from the gaseous phase of the parent Specification, wherein the substance is precipitated on to a plurality of carrier bodies connected in series electrically, wherein one of more of the carrier bodies are heated to a temperature at which the voltage across each decreases with an increase in current therethrough, and then one or more further carrier bodies are heated to the temperature at which their conductivity is also increased. The carrier bodies, preferably of silicon or the substance to be precipitated, rest on supports 5, preferably consisting of or at least coated with silicon, silica, or silicon nitride. These are connected to a voltage supply 8 through electrodes 3 and 4 which protrude through the walls of reaction chamber 1, which may be of quarts. One or more of switches 11 are opened and those carrier bodies related therewith are heated until the voltage across each decreases with an increase in current therethrough. The passage of current is controlled by a variable resistor 9. Then one or more further switches are opened and the one or more further carrier bodies heated as before. The temperature of the carrier bodies may be kept constant at a point where the current voltage characteristic of the resistor 9 is at a tangent to that of the plurality of carrier bodies. When all the carriers have attained this temperature, the reaction gas, e.g. silicochloro, form, either alone or mixed with hydrogenenters inlets 6 and is decomposed to precipitate silicon on the carriers. Specification 889,192 also is referred to.</p> |
