| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device that can obtain high reliability, and to provide a method of manufacturing the device. SOLUTION: A first conductive film 3 including a high melting point metal is formed on a nitride semiconductor layer 1. First heat treatment is performed so as to make the first conductive film 3 react on the nitride semiconductor layer 1. Then, a nitride layer 4 of the high melting point metal is formed and nitrogen holes are generated on a surface of the nitride semiconductor layer 1. A second conductive film 3 including Al is formed on the first conductive film 2. Second heat treatment is performed so as to diffuse Al atoms in the second conductive film 3 to the surface of the nitride semiconductor layer 1. COPYRIGHT: (C)2011,JPO&INPIT |
