| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high breakdown voltage semiconductor element which is improved in adhesion between an interlayer insulating film of the high breakdown voltage semiconductor element and a metal film formed on the interlayer insulating film, and a structure thereof. SOLUTION: The method of manufacturing the high breakdown voltage semiconductor element includes steps of forming an MOS 2 on the surface of a semiconductor substrate 1, forming an interlayer insulating film 3 on the semiconductor substrate having the MOS 2, forming a silicon film 4 on the interlayer insulating film, forming a silicon oxide film 5 by oxidizing the deposited silicon film 4 in an oxidizing atmosphere having a predetermined temperature, forming an opening which penetrates the silicon oxide film 5 and the interlayer insulating film 3, and making the metal film 6 adhere to the silicon oxide film and the interior of the opening and forming the electrode film 7 on the metal film 6. COPYRIGHT: (C)2011,JPO&INPIT
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