发明名称 METHOD OF DIAGNOSING FAULT OF CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a method of diagnosing a fault of a charged particle beam lithography system using a defect inspection device, the method correctly sensing the fault caused in the charged particle beam lithography system in an initial stage. SOLUTION: A substrate is lithographed under three conditions including a normal condition, a safe condition hardly causing a defect, and an acceleration condition easily causing a defect and, after forming a resist pattern, the number of defects is counted with respect to each area using the defect inspection device. An average relation between the inspection sensitivity and the number of defects is obtained with respect to each condition to see if there is any value outside the relation (the number of defects). For example, if there is a defect increasing in the same manner from an average value in both of the area lithographed under the safe condition and the area lithographed under the acceleration condition, it is assumed that the defect depends on the process. On the other hand, defects varying in the number of defects between these areas can be assumed to be caused by the electron beam lithography system. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011129624(A) 申请公布日期 2011.06.30
申请号 JP20090285204 申请日期 2009.12.16
申请人 NUFLARE TECHNOLOGY INC 发明人 NISHIMURA RIEKO
分类号 H01L21/027;H01J37/24;H01J37/305 主分类号 H01L21/027
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