SILICON CARBIDE MONOCRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

A method for producing a silicon carbide single crystal substrate according to the present invention includes steps of: (A) preparing a silicon carbide single crystal substrate having a mechanically polished main face; (B) performing chemical mechanical polishing on the main face of the silicon carbide single crystal substrate using a polishing slurry containing abrasive grains dispersed therein to finish the main face as a mirror surface; (C′1) oxidizing at least a part of the main face finished as a mirror surface by a gas phase to form an oxide; and (C′2) removing the oxide.