摘要 |
Disclosed is an active matrix substrate which is provided with a plurality of pixel electrodes (P) provided in matrix, and a plurality of TFTs (5) connected to the pixel electrodes (P), respectively. Each TFT (5) is provided with: a gate electrode (11a) which is provided on an insulating substrate; a gate insulating film (12a) which is provided so as to cover the gate electrode (11a); an oxide semiconductor layer (13a) which is provided on the gate insulating film (12a) such that the oxide semiconductor layer overlaps the gate electrode (11a); and the source electrode (17a) and the drain electrode (17b), which are provided to face each other, and which are connected to the oxide semiconductor layer (13a). A protecting insulating film (14a) is provided between the source and drain electrodes (17a, 17b) and the oxide semiconductor layer (13a) such that the protecting insulating film covers the oxide semiconductor layer (13a). |
申请人 |
SHARP KABUSHIKI KAISHA;CHIKAMA, YOSHIMASA;KATSUI, HIROMITSU;NISHIKI, HIROHIKO;OHTA, YOSHIFUMI;MIZUNO, YUUJI;HARA, TAKESHI;AITA, TETSUYA;SUZUKI, MASAHIKO;TAKEI, MICHIKO;NAKAGAWA, OKIFUMI;HARUMOTO, YOSHIYUKI |
发明人 |
CHIKAMA, YOSHIMASA;KATSUI, HIROMITSU;NISHIKI, HIROHIKO;OHTA, YOSHIFUMI;MIZUNO, YUUJI;HARA, TAKESHI;AITA, TETSUYA;SUZUKI, MASAHIKO;TAKEI, MICHIKO;NAKAGAWA, OKIFUMI;HARUMOTO, YOSHIYUKI |