| 摘要 |
<p>Disclosed is an SiC field effect transistor which comprises: an SiC semiconductor layer; and an MIS transistor structure that is formed in the SiC semiconductor layer and comprises a source region that has a first conductivity type, a body region that is in contact with the source region and has a second conductivity type, a drift region that is in contact with the body region and has the first conductivity type, and a gate electrode that faces the body region with a gate insulating film interposed therebetween in order to form a channel in the body region for the purpose of passing an electric current between the drift region and the source region. The MIS transistor structure comprises a barrier forming layer that forms a junction with the drift region and provides a junction barrier by means of the junction with the drift region, said junction barrier being lower than the diffusion potential of the body diode that is formed by the junction between the body region and the drift region.</p> |
