发明名称 NON-VOLATILE SEMICONDUCTOR INTEGRATED CIRCUIT FOR CONTROLLING SENSED VOLTAGE
摘要 PURPOSE: A non-volatile semiconductor integrated circuit for controlling a sensed voltage is provided to drop a sensing voltage having a high voltage level by using a switching device and a coupling device. CONSTITUTION: In a non-volatile semiconductor integrated circuit for controlling a sensed voltage, a current sensing part(110) applies a certain current to a memory region(130). The current sensing part senses changed voltage which is varied according to the resistance state of a corresponding cell. A write driver(120) buffers input data. A memory region includes a plurality of PCRAM cells. A voltage controller(140) level-shifts a sensing voltage and outputs a sensing output voltage. A latch unit(150) latches a sensing output signal.
申请公布号 KR20110073918(A) 申请公布日期 2011.06.30
申请号 KR20090130725 申请日期 2009.12.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DONG KEUN
分类号 G11C16/30;G11C16/26 主分类号 G11C16/30
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