| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device reducing the manufacturing cost by reducing the number of steps. <P>SOLUTION: In the method of manufacturing the semiconductor device having a memory cell region, a peripheral circuit region and an alignment mark region, the method of manufacturing the semiconductor device including the steps of forming an element separation film 8, forming a silicon film 121 on a semiconductor substrate in the memory cell region, forming a gate insulating film 15, forming an embedded gate electrode 23A, forming a cap insulating film 22, forming an interlayer insulating film 24 on an upper surface of the semiconductor substrate 1, and forming a bit contact opening in the interlayer insulating film 24, wherein the silicon film 121 in the peripheral circuit region and the substrate surface are exposed and an alignment mark 123 is formed in the alignment mark region between the step of forming the interlayer insulating film 24 on the upper surface of the semiconductor substrate 1 and the step of forming the bit contact opening in the interlayer insulating film 24. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
