| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, in some conventional technologies, of an offset arrangement. SOLUTION: A semiconductor device includes: a drain region of a first conductivity type; a body region of a second conductivity type, which is formed on the drain region; a trench which penetrates the body region and has a bottom reaching the drain region; a gate electrode embedded in the trench; and an insulating portion which insulates the gate electrode from the side and bottom of the trench. The body region becomes deeper in the depth direction of the trench as being closer to the side of the trench. The insulating portion has a gate insulating film formed on the wall surface of the trench and a bottom-embedded insulating film formed on the bottom of the trench. The bottom-embedded insulating film has a thick insulating film portion which becomes thicker than the gate insulating film as being deeper in the depth direction of the trench. The thick insulating film portion is positioned at a predetermined depth, with respect to the lowest point of the body region, in the depth direction of the trench. COPYRIGHT: (C)2011,JPO&INPIT
|
