| 摘要 |
An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step 101 of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and step 103 of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In step 101, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.
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