| 摘要 |
A landing plug contact in a semiconductor memory device is fabricated by: forming gate spacer layers at sides of the gate stacks to define a first contact hole and a second contact hole, where a landing plug contact will be formed between the gate spacer layers of the first contact hole and no landing plug contact is formed in the second contact hole; forming a conductive layer to fill at least the first and second contact holes; forming a hard mask pattern over the conductive layer to expose the conductive layer filling the second contact hole; removing the conductive layer filling the second contact hole by an etching process; forming an insulation layer to fill at least the second contact hole where the conductive layer is removed; and forming a landing plug contact within the contact hole by performing a planarization process on the insulation layer and the conductive layer.
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