| 摘要 |
As an n-type buffer layer, a material including TiO2 as a base material with addition of one or plurality of ZrO2, HfO2, GeO2, BaTiO3, SrTiO3, CaTiO3, MgTiO3, K(Ta, Nb)O3, and Na(Ta, Nb)O3 for band gap control, a material including BaTiO3 as a base material with addition of one or plurality of SrTiO3, CaTiO3, and MgTiO3 for band gap control, or a material comprising K(Ta, Nb)O3 as a base material with addition of Na(Ta, Nb)O3 for band gap control is used.
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