TRANSISTOR

摘要

PURPOSE: A transistor is provided to prevent etching issue, lack of uniformity, and a leakage current by increasing threshold voltage through an insertion layer between a source electrode and a channel layer. CONSTITUTION: In a transistor, a channel layer(C1) including an oxide semiconductor is formed on a substrate(SUB1). A gate electrode(G1) is formed on the channel layer. A source electrode(S1) and a drain electrode(D1) are respectively contacted with both ends of the channel layer. A semiconductor insertion layer(A1) is formed between the source electrode and the channel layer. A potential barrier between the source electrode and the channel layer is increased by the semiconductor insertion layer.