| 摘要 |
<p>PURPOSE: A thin film transistor and a method of fabricating the same are provided to improve the property o a thin film transistor including poly-silicon by uniformly transferring the heat of laser through a thermal conductive layer. CONSTITUTION: A first metal material is deposited on a substrate(210) to form a first metal layer. A gate electrode(212) and a gate wiring(213) are formed by patterning the first metal layer. A gate insulating layer(214) covering the gate electrode and gate wiring is formed. A pure amorphous silicon layer and a second metal layer are formed on the gate insulating layer. A photoresist pattern(282) corresponds to the center of the gate electrode.</p> |
