发明名称 ION BEAM SOURCE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an ion beam source which can be used even for deposition of an insulating material without forming an arc discharge caused by rapid electrification due to positive ion flow made incident to a target surface. <P>SOLUTION: The ion beam source used together with a non-conductive target is composed of grids 1 to 4 which extract ions, and a power source (DC power source 16 and beam control device 17) which supplies pulse power to these grids. The power source includes: power sources for a grid 1 to a grid 3, respectively; a set 19 of switches which connect and cut-off the supply of powers to the grids; a power switching device 21 to control these switches; and a pulse generator 20 in order to carry out switching of the switches. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011129522(A) 申请公布日期 2011.06.30
申请号 JP20100278096 申请日期 2010.12.14
申请人 SPP PROCESS TECHNOLOGY SYSTEMS UK LTD 发明人 MCNEIL JOHN;BENNETT PAUL GEORGE
分类号 H01J27/02;C23C14/46;H01J37/08;H01J37/317 主分类号 H01J27/02
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