| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a field emission cathode, which method exerts no adverse effect on element characteristics when etching is performed using an ion beam. <P>SOLUTION: (a) An insulating layer 2, a gate electrode layer 3, and a sacrificial layer 4 made of a thermosetting resin that develops Vickers hardness in the range of Hv 95 to 140 by heating are formed on a substrate 1 in this order and the sacrificial layer 4 is held at 180-210°C for a predetermined period of time to be cured. (b) An opening 5 is formed in the sacrificial layer 4 and the gate electrode layer 3 by applying a focused ion beam thereto. (c) A cavity 6 is formed by etching the insulating layer 2 by using the sacrificial layer 4 and the gate electrode layer 3 as a mask. (d) An emitter electrode 8 is formed on the substrate 1 in the cavity 6 by vapor deposition of an emitter material 7 onto the substrate 1 vertically from above. (e) The emitter material 7 is removed together with the sacrificial layer 4 from the gate electrode layer 3. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
