发明名称 SOLID-STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To expand a dynamic range by making a value of a saturation level of a low-sensitivity photodiode in a pixel different for each color in a CMOS image sensor. SOLUTION: A solid-state imaging device includes: an imaging area 10 in which a plurality of unit pixels 1 are arranged; and a plurality of color filters including at least first and second color filters having different spectral transmission characteristics. Each unit pixel includes: a high-sensitivity photodiode PD1; a first read transistor READ1 for reading out a signal charge photoelectrically converted by the high-sensitivity photodiode; a low-sensitivity photodiode PD2; a second read transistor READ2 for reading out a signal charge photoelectrically converted by the low-sensitivity photodiode; a floating diffusion FD; a reset transistor RST; and an amplifier transistor AMP. When a saturation level of the low-sensitivity photodiode corresponding to the first color filter is set as QSAT1 while a saturation level of the low-sensitivity photodiode corresponding to the second color filter is set as QSAT2, the relationship QSAT1>QSAT2 is satisfied. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011130022(A) 申请公布日期 2011.06.30
申请号 JP20090284332 申请日期 2009.12.15
申请人 TOSHIBA CORP 发明人 TANAKA NAGATAKA
分类号 H04N9/07;H01L27/14;H01L27/146;H04N5/335 主分类号 H04N9/07
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