| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure that is reduced in contact resistance between bit wiring and an impurity diffusion layer on a semiconductor substrate. SOLUTION: A buried word line including a gate electrode via a gate insulating film and a buried insulating film positioned thereupon are buried in a trench formed on one surface of the semiconductor substrate, and the impurity diffusion layer is formed on a surface region on the one surface of the semiconductor substrate adjacent to the trench. The bit wiring is formed on the region where the impurity diffusion layer is formed, and at least the bottom part side of the bit wiring connected to the impurity diffusion layer is formed of an implanted polysilicon film formed by further implanting impurity ions into impurity-doped type polysilicon with impurities doped. COPYRIGHT: (C)2011,JPO&INPIT |
