| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose device characteristics are improved by applying intense stress to a channel region. SOLUTION: The semiconductor device includes a semiconductor substrate 1, a gate insulating film 2 formed on a first surface of the semiconductor substrate 1, a gate electrode 3 formed on the gate insulating film 2, a gate sidewall insulating film 4 formed on a sidewall of the gate electrode 3, a source/drain diffusion layer region 5 and 6 adjoining the channel region formed in the semiconductor substrate 1 under the gate electrode 3 and including implanted impurities, and stress application films 8 formed on the source/drain diffusion layer regions 5 and 6 except the upper part of the gate electrode 3 with recesses or projections 50, 51, 60, and 61 formed in a region where the source/drain diffusion layer regions 5 and 6 are formed on the first surface of the semiconductor substrate 1. COPYRIGHT: (C)2011,JPO&INPIT |
