| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing an increase of reverse current in a rectifier element, and capable of preventing diffusion of impurities such as fluorine and hydrogen to a memory element. SOLUTION: The semiconductor memory device includes a conductive wire L2(i) extending in a first direction, a conductive wire L3(j) extending in a second direction that crosses the first direction, and a cell unit consisting of a phase-change film 17 and a rectifying device that is connected in series between the conductive wire L2(i) and the conductive wire L3(j). Furthermore, the device includes a silicon nitride film 21 formed on the side face of the phase-change film 17, and a dual sidewall film containing the silicon oxide film 20 and the silicon nitride film 21 that are formed sequentially on the side face of the rectifying device. COPYRIGHT: (C)2011,JPO&INPIT |
