发明名称 |
METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WHICH EXPOSE DIFFERENT SURFACE AREA |
摘要 |
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and for manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
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申请公布号 |
US2011159435(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20090647453 |
申请日期 |
2009.12.26 |
申请人 |
D2S, INC. |
发明人 |
ZABLE HAROLD ROBERT;FUJIMURA AKIRA |
分类号 |
G03F7/20;G06F17/50;G06F19/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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