发明名称 LOW DISTORTION MOS ATTENUATOR
摘要 An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.
申请公布号 US2011156809(A1) 申请公布日期 2011.06.30
申请号 US20100771852 申请日期 2010.04.30
申请人 MAXIM INTEGRATED PRODUCTS, INC. 发明人 MEYER ROBERT G.;BIRKELAND JOEL D.
分类号 H03K5/00 主分类号 H03K5/00
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