发明名称 Semiconductor Component with an Emitter Control Electrode
摘要 A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.
申请公布号 US2011156095(A1) 申请公布日期 2011.06.30
申请号 US20100977755 申请日期 2010.12.23
申请人 INFINEON TECHNOLOGIES AG 发明人 HIRLER FRANZ;MAUDER ANTON;PFIRSCH FRANK;SCHULZE HANS-JOACHIM
分类号 H01L29/739 主分类号 H01L29/739
代理机构 代理人
主权项
地址